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SI4411DY-T1-E3

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SI4411DY-T1-E3

MOSFET P-CH 30V 9A 8SO

Manufacturer: Vishay Siliconix

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Vishay Siliconix SI4411DY-T1-E3 is a P-Channel TrenchFET® power MOSFET designed for high-efficiency power management applications. This device features a 30V drain-source voltage and a continuous drain current capability of 9A at 25°C, with a maximum power dissipation of 1.5W. The low on-resistance of 10mOhm at 13A and 10V Vgs, coupled with a gate charge of 65nC at 5V, ensures efficient switching performance. Operating over a wide temperature range of -55°C to 150°C, it is housed in a standard 8-SOIC package, suitable for surface mounting. This component finds application in power supplies, battery management, and motor control systems.

Additional Information

Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-SOIC (0.154"", 3.90mm Width)
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C9A (Ta)
Rds On (Max) @ Id, Vgs10mOhm @ 13A, 10V
FET Feature-
Power Dissipation (Max)1.5W (Ta)
Vgs(th) (Max) @ Id3V @ 250µA
Supplier Device Package8-SOIC
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs65 nC @ 5 V

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