SI4410BDY-T1-GE3
MOSFET N-CH 30V 7.5A 8SOManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SI4410BDY-T1-GE3 is an N-Channel TrenchFET® power MOSFET with a Drain-to-Source Voltage (Vdss) of 30V. This component offers a continuous Drain Current (Id) of 7.5A (Ta) and a low on-resistance (Rds On) of a maximum 13.5mOhm at 10A and 10V. It is designed for efficient power management with a maximum power dissipation of 1.4W (Ta). The device features a typical Gate Charge (Qg) of 20 nC at 5V and operates with a drive voltage range up to 10V. The SI4410BDY-T1-GE3 is housed in an 8-SOIC package, suitable for surface mount applications. It is engineered for demanding applications in sectors such as automotive, industrial, and computing. Operating temperature range is from -55°C to 150°C.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7.5A (Ta) |
| Rds On (Max) @ Id, Vgs | 13.5mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.4W (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 5 V |
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