SI4409DY-T1-GE3
MOSFET P-CH 150V 1.3A 8SOManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix P-Channel TrenchFET® MOSFET, part number SI4409DY-T1-GE3, offers a 150V drain-to-source voltage and a continuous drain current of 1.3A at 25°C (Tc). This device features a low on-resistance of 1.2Ohm maximum at 500mA and 10V Vgs. With a maximum power dissipation of 4.6W at 25°C (Tc), it is suitable for demanding applications. The SI4409DY-T1-GE3 utilizes a P-Channel MOSFET technology and comes in an 8-SOIC surface mount package. Key parameters include a gate charge of 12 nC maximum at 10V and input capacitance of 332 pF maximum at 50V. This component is frequently employed in industrial and automotive power management systems. Operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.3A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.2Ohm @ 500mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.2W (Ta), 4.6W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 332 pF @ 50 V |