SI4409DY-T1-E3
MOSFET P-CH 150V 1.3A 8SOManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix TrenchFET® P-Channel MOSFET, part number SI4409DY-T1-E3, offers a 150V drain-to-source voltage and a continuous drain current of 1.3A at 25°C (Tc). This device features a low on-resistance (Rds On) of 1.2 Ohm maximum at 500mA and 10V Vgs. The SI4409DY-T1-E3 is constructed using Metal Oxide technology and is housed in an 8-SOIC package for surface mounting. Key parameters include a gate charge (Qg) of 12 nC maximum at 10V and input capacitance (Ciss) of 332 pF maximum at 50V. Maximum power dissipation is rated at 2.2W (Ta) and 4.6W (Tc). This component is suitable for applications in the industrial and automotive sectors. Operating temperature ranges from -55°C to 150°C.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.3A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.2Ohm @ 500mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.2W (Ta), 4.6W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 332 pF @ 50 V |
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