SI4408DY-T1-GE3
MOSFET N-CH 20V 14A 8SOManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix TrenchFET® SI4408DY-T1-GE3 is a N-Channel Power MOSFET designed for high-efficiency power switching applications. This device features a 20V drain-source breakdown voltage and a continuous drain current capability of 14A at 25°C ambient. The low on-resistance of 4.5mOhm at 21A and 10V gate drive voltage, coupled with a maximum gate charge of 32 nC at 4.5V, optimizes switching performance. The MOSFET is housed in an 8-SOIC package, suitable for surface mounting, and offers a power dissipation of 1.6W at 25°C ambient. Operating across a temperature range of -55°C to 150°C, the SI4408DY-T1-GE3 is employed in various sectors including automotive, industrial, and consumer electronics for applications such as power management and DC-DC conversion. The device supports a gate-source voltage range of ±20V and a threshold voltage of 1V at 250µA. This component is supplied in Tape & Reel packaging.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 11 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 14A (Ta) |
| Rds On (Max) @ Id, Vgs | 4.5mOhm @ 21A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.6W (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 250µA (Min) |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 32 nC @ 4.5 V |
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