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SI4408DY-T1-GE3

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SI4408DY-T1-GE3

MOSFET N-CH 20V 14A 8SO

Manufacturer: Vishay Siliconix

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Vishay Siliconix TrenchFET® SI4408DY-T1-GE3 is a N-Channel Power MOSFET designed for high-efficiency power switching applications. This device features a 20V drain-source breakdown voltage and a continuous drain current capability of 14A at 25°C ambient. The low on-resistance of 4.5mOhm at 21A and 10V gate drive voltage, coupled with a maximum gate charge of 32 nC at 4.5V, optimizes switching performance. The MOSFET is housed in an 8-SOIC package, suitable for surface mounting, and offers a power dissipation of 1.6W at 25°C ambient. Operating across a temperature range of -55°C to 150°C, the SI4408DY-T1-GE3 is employed in various sectors including automotive, industrial, and consumer electronics for applications such as power management and DC-DC conversion. The device supports a gate-source voltage range of ±20V and a threshold voltage of 1V at 250µA. This component is supplied in Tape & Reel packaging.

Additional Information

Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 11 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-SOIC (0.154"", 3.90mm Width)
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C14A (Ta)
Rds On (Max) @ Id, Vgs4.5mOhm @ 21A, 10V
FET Feature-
Power Dissipation (Max)1.6W (Ta)
Vgs(th) (Max) @ Id1V @ 250µA (Min)
Supplier Device Package8-SOIC
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)20 V
Gate Charge (Qg) (Max) @ Vgs32 nC @ 4.5 V

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