SI4403BDY-T1-GE3
MOSFET P-CH 20V 7.3A 8SOManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix TrenchFET® P-Channel MOSFET, part number SI4403BDY-T1-GE3, offers a 20V drain-to-source voltage and a continuous drain current of 7.3A at 25°C (Ta). This surface mount component features a maximum power dissipation of 1.35W (Ta) and a low on-resistance of 17mOhm at 9.9A and 4.5V Vgs. The device operates across a temperature range of -55°C to 150°C (TJ) and is supplied in an 8-SOIC package. Drive voltages range from 1.8V to 4.5V, with a gate charge of 50 nC at 5V Vgs and a maximum gate-source voltage of ±8V. This MOSFET is suitable for applications in the automotive and industrial sectors.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7.3A (Ta) |
| Rds On (Max) @ Id, Vgs | 17mOhm @ 9.9A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 1.35W (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 350µA |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 50 nC @ 5 V |