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SI4403BDY-T1-E3

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SI4403BDY-T1-E3

MOSFET P-CH 20V 7.3A 8SO

Manufacturer: Vishay Siliconix

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Vishay Siliconix introduces the SI4403BDY-T1-E3, a P-Channel TrenchFET® Power MOSFET. This component features a drain-to-source voltage (Vdss) of 20 V and a continuous drain current (Id) of 7.3 A at 25°C (Ta), with a maximum power dissipation of 1.35 W (Ta). The Rds On is specified as a maximum of 17 mOhm at 9.9 A and 4.5 V, with drive voltages ranging from 1.8 V to 4.5 V. The gate charge (Qg) is rated at a maximum of 50 nC at 5 V. This MOSFET is housed in an 8-SOIC package (0.154", 3.90mm width) suitable for surface mounting and is supplied in tape and reel packaging. It operates across a temperature range of -55°C to 150°C (TJ) and supports a maximum gate-source voltage (Vgs) of ±8V. The SI4403BDY-T1-E3 finds application in power management and switching circuits across various industries requiring efficient power control.

Additional Information

Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-SOIC (0.154"", 3.90mm Width)
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C7.3A (Ta)
Rds On (Max) @ Id, Vgs17mOhm @ 9.9A, 4.5V
FET Feature-
Power Dissipation (Max)1.35W (Ta)
Vgs(th) (Max) @ Id1V @ 350µA
Supplier Device Package8-SOIC
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Vgs (Max)±8V
Drain to Source Voltage (Vdss)20 V
Gate Charge (Qg) (Max) @ Vgs50 nC @ 5 V

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