SI4403BDY-T1-E3
MOSFET P-CH 20V 7.3A 8SOManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix introduces the SI4403BDY-T1-E3, a P-Channel TrenchFET® Power MOSFET. This component features a drain-to-source voltage (Vdss) of 20 V and a continuous drain current (Id) of 7.3 A at 25°C (Ta), with a maximum power dissipation of 1.35 W (Ta). The Rds On is specified as a maximum of 17 mOhm at 9.9 A and 4.5 V, with drive voltages ranging from 1.8 V to 4.5 V. The gate charge (Qg) is rated at a maximum of 50 nC at 5 V. This MOSFET is housed in an 8-SOIC package (0.154", 3.90mm width) suitable for surface mounting and is supplied in tape and reel packaging. It operates across a temperature range of -55°C to 150°C (TJ) and supports a maximum gate-source voltage (Vgs) of ±8V. The SI4403BDY-T1-E3 finds application in power management and switching circuits across various industries requiring efficient power control.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7.3A (Ta) |
| Rds On (Max) @ Id, Vgs | 17mOhm @ 9.9A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 1.35W (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 350µA |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 50 nC @ 5 V |
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