SI4401DY-T1-GE3
MOSFET P-CH 40V 8.7A 8SOManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix P-Channel MOSFET, part number SI4401DY-T1-GE3, from the TrenchFET® series. This device features a 40V drain-source voltage and supports a continuous drain current of 8.7A at 25°C. The Rds On is specified at a maximum of 15.5mOhm at 10.5A and 10V Vgs. It operates with a gate-source voltage range of ±20V, and a gate threshold voltage of 1V at 250µA. The device offers a maximum power dissipation of 1.5W. It is available in an 8-SOIC surface mount package and operates across a temperature range of -55°C to 150°C. This component is suitable for applications in consumer electronics and industrial power management.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8.7A (Ta) |
| Rds On (Max) @ Id, Vgs | 15.5mOhm @ 10.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.5W (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 250µA (Min) |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 50 nC @ 5 V |
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