SI4398DY-T1-GE3
MOSFET N-CH 20V 19A 8SOManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SI4398DY-T1-GE3 is an N-Channel Power MOSFET designed for high-efficiency switching applications. This device features a 20V drain-source breakdown voltage and a continuous drain current capability of 19A at 25°C ambient. The low Rds(on) of 2.8mOhm at 25A and 10V gate-source voltage minimizes conduction losses. With a gate charge (Qg) of 50 nC at 4.5V and an input capacitance (Ciss) of 5620 pF at 10V, it is optimized for fast switching performance. The device is housed in an 8-SOIC package and supports surface mounting. Key parameters include a maximum power dissipation of 1.6W (Ta) and an operating temperature range of -55°C to 150°C. This MOSFET is suitable for automotive and industrial power management systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 19A (Ta) |
| Rds On (Max) @ Id, Vgs | 2.8mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.6W (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 50 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5620 pF @ 10 V |
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