SI4398DY-T1-E3
MOSFET N-CH 20V 19A 8SOManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SI4398DY-T1-E3 is an N-Channel Power MOSFET designed for efficient switching applications. This component features a Drain-Source Voltage (Vdss) of 20 V and a continuous Drain Current (Id) of 19 A at 25°C, with a maximum power dissipation of 1.6 W. The device exhibits a low on-resistance of 2.8 mOhm at 25 A and 10 V gate drive. Key parameters include a maximum gate charge (Qg) of 50 nC at 4.5 V and an input capacitance (Ciss) of 5620 pF at 10 V. The SI4398DY-T1-E3 is available in an 8-SOIC surface mount package and operates across a temperature range of -55°C to 150°C. It is utilized in power management, automotive, and industrial automation systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 19A (Ta) |
| Rds On (Max) @ Id, Vgs | 2.8mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.6W (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 50 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5620 pF @ 10 V |
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