SI4396DY-T1-GE3
MOSFET N-CH 30V 16A 8SOManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix SI4396DY-T1-GE3 is an N-Channel TrenchFET® power MOSFET. This component features a 30V drain-source voltage (Vdss) and a continuous drain current (Id) of 16A at 25°C (Tc). The Rds On is specified at a maximum of 11.5mOhm at 10A and 10V gate-source voltage. It offers a 4.5V to 10V drive voltage range for optimal Rds On performance. With a maximum gate charge (Qg) of 45 nC at 10V and input capacitance (Ciss) of 1675 pF at 15V, this device is designed for efficient switching. The SI4396DY-T1-GE3 supports power dissipation of 3.1W (Ta) and 5.4W (Tc) and operates across a temperature range of -55°C to 150°C. It is housed in an 8-SOIC surface mount package and is supplied on tape and reel. This MOSFET is suitable for applications in power management, automotive, and industrial sectors.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 16A (Tc) |
| Rds On (Max) @ Id, Vgs | 11.5mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.1W (Ta), 5.4W (Tc) |
| Vgs(th) (Max) @ Id | 2.6V @ 250µA |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 45 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1675 pF @ 15 V |
Request a Quote
Clients Also Buy
SI2365EDS-T1-GE3
MOSFET P-CH 20V 5.9A TO236
SI2302CDS-T1-E3
MOSFET N-CH 20V 2.6A SOT23-3
SIA449DJ-T1-GE3
MOSFET P-CH 30V 12A PPAK SC70-6
