SI4396DY-T1-E3
MOSFET N-CH 30V 16A 8SOManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix TrenchFET® MOSFET N-Channel, part number SI4396DY-T1-E3, offers a 30V drain-to-source voltage and 16A continuous drain current at 25°C (Tc). This surface mount component, packaged in an 8-SOIC (0.154", 3.90mm Width), features a maximum Rds(On) of 11.5mOhm at 10A and 10V Vgs. Drive voltages range from 4.5V to 10V. Key parameters include a 45nC maximum gate charge at 10V and 1675pF input capacitance at 15V. The device supports a maximum gate-source voltage of ±20V and has a threshold voltage of 2.6V at 250µA. Power dissipation is rated at 3.1W (Ta) and 5.4W (Tc). Operating temperature range is -55°C to 150°C (TJ). Applications include power management and switching circuits across various industrial sectors.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 16A (Tc) |
| Rds On (Max) @ Id, Vgs | 11.5mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.1W (Ta), 5.4W (Tc) |
| Vgs(th) (Max) @ Id | 2.6V @ 250µA |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 45 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1675 pF @ 15 V |
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