SI4384DY-T1-E3
MOSFET N-CH 30V 10A 8SOManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix SI4384DY-T1-E3 is an N-Channel Power MOSFET from the TrenchFET® series. This device offers a 30V drain-source voltage and a continuous drain current capability of 10A at 25°C. With a low on-resistance of 8.5mOhm at 15A and 10V Vgs, it achieves efficient power handling. The gate charge is specified at 18 nC maximum at 4.5V Vgs, and it operates with drive voltages between 4.5V and 10V. This MOSFET is housed in an 8-SOIC package suitable for surface mounting and supports a maximum power dissipation of 1.47W. It is designed for applications requiring robust power switching in automotive and industrial power management systems. The operating temperature range is -55°C to 150°C.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10A (Ta) |
| Rds On (Max) @ Id, Vgs | 8.5mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.47W (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 18 nC @ 4.5 V |
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