SI4378DY-T1-GE3
MOSFET N-CH 20V 19A 8SOManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix SI4378DY-T1-GE3, a TrenchFET® series N-Channel Power MOSFET, offers a 20V drain-source voltage and 19A continuous drain current at 25°C (Ta). This surface mount device, packaged in an 8-SOIC, features a low Rds(on) of 2.7mOhm at 25A and 4.5V Vgs. Drive voltages range from 2.5V to 4.5V, with a maximum gate charge of 55 nC at 4.5V. Input capacitance (Ciss) is specified as 8500 pF at 10V. The component supports a power dissipation of 1.6W (Ta) and operates across a temperature range of -55°C to 150°C. Applications include power management and switching circuits in various industrial and automotive systems.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 19A (Ta) |
| Rds On (Max) @ Id, Vgs | 2.7mOhm @ 25A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 1.6W (Ta) |
| Vgs(th) (Max) @ Id | 1.8V @ 250µA |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 55 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 8500 pF @ 10 V |
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