SI4362BDY-T1-E3
MOSFET N-CH 30V 29A 8SOManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix SI4362BDY-T1-E3 is an N-Channel Power MOSFET from the TrenchFET® series. This component features a 30V drain-source breakdown voltage and a continuous drain current capability of 29A at 25°C (Tc). The device exhibits a low on-resistance of 4.6mOhm maximum at 19.8A and 10V Vgs. Key parameters include a gate charge of 115 nC maximum at 10V Vgs and an input capacitance of 4800 pF maximum at 15V Vds. Designed for surface mounting, it is housed in an 8-SOIC package with a width of 3.90mm. Power dissipation is rated at 3W (Ta) and 6.6W (Tc). This MOSFET is suitable for applications requiring efficient power switching in areas such as industrial automation and consumer electronics. Operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 29A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.6mOhm @ 19.8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3W (Ta), 6.6W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 115 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4800 pF @ 15 V |
Request a Quote
Clients Also Buy
SI2365EDS-T1-GE3
MOSFET P-CH 20V 5.9A TO236
SI2302CDS-T1-E3
MOSFET N-CH 20V 2.6A SOT23-3
SIA449DJ-T1-GE3
MOSFET P-CH 30V 12A PPAK SC70-6
