SI4354DY-T1-GE3
MOSFET N-CH 30V 9.5A 8SOManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix MOSFET N-Channel SI4354DY-T1-GE3. This TrenchFET® series component features a 30 V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 9.5 A at 25°C (Ta). The device offers a maximum on-resistance (Rds On) of 16.5 mOhm at 9.5 A and 10 V. Drive voltage specifications range from 4.5 V to 10 V. The maximum gate charge (Qg) is 10.5 nC at 4.5 V. With a power dissipation (Pd) of 2.5 W at 25°C (Ta), this surface mount device is housed in an 8-SOIC package (0.154", 3.90mm width). Operating temperature range is -55°C to 150°C (TJ). This component is utilized across various industries including power management, consumer electronics, and industrial automation. It is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9.5A (Ta) |
| Rds On (Max) @ Id, Vgs | 16.5mOhm @ 9.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta) |
| Vgs(th) (Max) @ Id | 1.6V @ 250µA |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 10.5 nC @ 4.5 V |
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