SI4354DY-T1-E3
MOSFET N-CH 30V 9.5A 8SOManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix MOSFET N-Channel, 30V, 9.5A, TrenchFET® series, part number SI4354DY-T1-E3. This surface mount device features a low Rds(on) of 16.5mOhm at 9.5A and 10V Vgs, with a gate charge of 10.5 nC at 4.5V. The N-Channel MOSFET is designed for efficient power switching applications with a maximum continuous drain current of 9.5A and a power dissipation of 2.5W. The 8-SOIC package is ideal for compact designs. Operating temperature range is -55°C to 150°C. Commonly utilized in consumer electronics, industrial automation, and power management systems.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9.5A (Ta) |
| Rds On (Max) @ Id, Vgs | 16.5mOhm @ 9.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta) |
| Vgs(th) (Max) @ Id | 1.6V @ 250µA |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 10.5 nC @ 4.5 V |
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