SI4346DY-T1-GE3
MOSFET N-CH 30V 5.9A 8SOManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix MOSFET N-Channel, TrenchFET® series, part number SI4346DY-T1-GE3. This device features a 30 V drain-source voltage and a continuous drain current of 5.9 A at 25°C. The Rds On is specified at a maximum of 23 mOhm at 8 A, 10 V, with a gate drive voltage range from 2.5 V to 10 V. With a maximum gate charge of 10 nC at 4.5 V and a maximum gate-source voltage of ±12 V, this N-channel MOSFET is designed for efficient switching. It operates across a temperature range of -55°C to 150°C. The component is housed in an 8-SOIC package, suitable for surface mounting, and offers a power dissipation of 1.31 W at 25°C. This component finds application in power management, consumer electronics, and industrial automation.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.9A (Ta) |
| Rds On (Max) @ Id, Vgs | 23mOhm @ 8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.31W (Ta) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 10V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 10 nC @ 4.5 V |
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