SI4346DY-T1-E3
MOSFET N-CH 30V 5.9A 8SOManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SI4346DY-T1-E3 is an N-channel Power MOSFET featuring a 30V drain-source voltage and 5.9A continuous drain current at 25°C ambient. This TrenchFET® series device offers a low on-resistance of 23mOhm maximum at 8A and 10V Vgs. The device is housed in an 8-SOIC package for surface mounting and supports a gate charge of 10nC maximum at 4.5V Vgs. Its maximum power dissipation is 1.31W at 25°C ambient. Operating temperature range is -55°C to 150°C. This component is commonly utilized in power management applications across industrial and automotive sectors. The device is supplied in tape and reel packaging.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.9A (Ta) |
| Rds On (Max) @ Id, Vgs | 23mOhm @ 8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.31W (Ta) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 10V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 10 nC @ 4.5 V |
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