SI4336DY-T1-E3
MOSFET N-CH 30V 17A 8SOManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix SI4336DY-T1-E3 is an N-Channel Power MOSFET from the TrenchFET® series. This component features a 30V Drain-Source Voltage (Vdss) and a continuous drain current of 17A at 25°C (Ta), with a maximum power dissipation of 1.6W (Ta). The device offers a low on-resistance of 3.25mOhm at 25A and 10V. It is designed for surface mounting in an 8-SOIC package and operates across a temperature range of -55°C to 150°C. Key parameters include a gate charge (Qg) of 50 nC at 4.5V and an input capacitance (Ciss) of 5600 pF at 15V. Drive voltages range from 4.5V to 10V. This MOSFET is suitable for applications in power management, automotive, and industrial sectors.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 17A (Ta) |
| Rds On (Max) @ Id, Vgs | 3.25mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.6W (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 50 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5600 pF @ 15 V |
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