SI4324DY-T1-GE3
MOSFET N-CH 30V 36A 8SOManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix TrenchFET® SI4324DY-T1-GE3 is an N-Channel power MOSFET designed for high-efficiency switching applications. This component features a 30V drain-source voltage (Vdss) and supports a continuous drain current of 36A at 25°C (Tc). The low on-resistance of 3.2mOhm at 20A and 10V (Vgs) minimizes conduction losses. With a maximum power dissipation of 7.8W at 25°C (Tc), it offers robust thermal performance. The device utilizes a TrenchFET® technology for enhanced performance and is supplied in an 8-SOIC package for surface mounting. Key parameters include a gate charge (Qg) of 85 nC at 10V and input capacitance (Ciss) of 3510 pF at 15V. It operates across a temperature range of -55°C to 150°C. This MOSFET is suitable for use in automotive, industrial, and power supply applications where efficient power management is critical.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 36A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.2mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.5W (Ta), 7.8W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 85 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3510 pF @ 15 V |
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