SI4322DY-T1-GE3
MOSFET N-CH 30V 18A 8SOManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SI4322DY-T1-GE3 is an N-Channel TrenchFET® power MOSFET designed for demanding applications. This device features a 30V drain-source voltage (Vdss) and supports a continuous drain current of 18A (Tc) at 25°C. The low on-resistance of 8.5mOhm at 15A and 10V gate-source voltage (Vgs) minimizes conduction losses. With a maximum gate charge (Qg) of 38 nC at 10V Vgs and an input capacitance (Ciss) of 1640 pF at 15V Vds, it offers efficient switching characteristics. The MOSFET operates across a wide temperature range of -55°C to 150°C (TJ) and is housed in a compact 8-SOIC package suitable for surface mounting. Power dissipation is rated at 3.1W (Ta) and 5.4W (Tc). This component finds utility in power management, automotive, and industrial systems. The drive voltage range is specified from 4.5V to 10V for optimal Rds On performance.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 18A (Tc) |
| Rds On (Max) @ Id, Vgs | 8.5mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.1W (Ta), 5.4W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 38 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1640 pF @ 15 V |
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