SI4322DY-T1-E3
MOSFET N-CH 30V 18A 8SOManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix SI4322DY-T1-E3 is an N-Channel MOSFET from the TrenchFET® series. This component features a 30V drain-source voltage and a continuous drain current of 18A at 25°C (Tc). With a maximum on-resistance of 8.5mOhm at 15A and 10V Vgs, it offers efficient power handling. The device supports drive voltages from 4.5V to 10V and has a gate charge of 38 nC at 10V. Input capacitance (Ciss) is rated at 1640 pF maximum at 15V Vds. Power dissipation is 3.1W (Ta) and 5.4W (Tc). This surface mount device is housed in an 8-SOIC package and operates across a temperature range of -55°C to 150°C. Its specifications make it suitable for applications in power management and automotive sectors.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 18A (Tc) |
| Rds On (Max) @ Id, Vgs | 8.5mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.1W (Ta), 5.4W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 38 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1640 pF @ 15 V |
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