SI4196DY-T1-E3
MOSFET N-CH 20V 8A 8SOManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix TrenchFET® N-Channel MOSFET, part number SI4196DY-T1-E3, offers a 20V drain-source breakdown voltage and continuous drain current capability of 8A at 25°C (Tc). This device features a low on-resistance of 27mOhm maximum at 8A and 4.5V Vgs, supported by a drive voltage range of 1.8V to 4.5V. The N-channel MOSFET utilizes TrenchFET® technology for enhanced performance. Key electrical parameters include a maximum gate charge of 22nC at 8V Vgs and input capacitance of 830pF at 10V Vds. Power dissipation is rated at 2W (Ta) and 4.6W (Tc). The SI4196DY-T1-E3 is housed in an 8-SOIC package, suitable for surface mounting, and operates across a temperature range of -55°C to 150°C. This component is widely utilized in power management applications across industrial and automotive sectors.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8A (Tc) |
| Rds On (Max) @ Id, Vgs | 27mOhm @ 8A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 2W (Ta), 4.6W (Tc) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 22 nC @ 8 V |
| Input Capacitance (Ciss) (Max) @ Vds | 830 pF @ 10 V |
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