SI4190DY-T1-GE3
MOSFET N-CH 100V 20A 8-SOICManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SI4190DY-T1-GE3 is an N-Channel Power MOSFET designed for demanding applications. This device features a 100 V drain-source voltage capability and a continuous drain current rating of 20 A at 25°C (Tc). The low on-resistance of 8.8 mOhm maximum at 15 A and 10 V gate-source voltage ensures efficient power transfer. With a gate charge of 58 nC maximum at 10 V and input capacitance of 2000 pF maximum at 50 V, it offers balanced switching characteristics. The MOSFET is housed in an 8-SOIC (0.154", 3.90mm width) surface mount package, supplied in Cut Tape (CT). This component finds utility in power management and switching applications across various industrial sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Cut Tape (CT)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
| Rds On (Max) @ Id, Vgs | 8.8mOhm @ 15A, 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 2.8V @ 250µA |
| Supplier Device Package | 8-SOIC |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 58 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2000 pF @ 50 V |
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