SI4190ADY-T1-GE3
MOSFET N-CH 100V 18.4A 8SOManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix SI4190ADY-T1-GE3 is an N-Channel TrenchFET® power MOSFET designed for demanding applications. This device features a 100V drain-source voltage and a continuous drain current of 18.4A at 25°C (Tc). The low on-resistance of 8.8mOhm at 15A and 10V Vgs, coupled with a maximum gate charge of 67nC at 10V Vgs, indicates efficient switching characteristics. With a maximum power dissipation of 3W (Ta) and 6W (Tc), and a robust operating temperature range of -55°C to 150°C (TJ), it is suitable for power management solutions in industrial, automotive, and consumer electronics sectors. The 8-SOIC package facilitates surface mounting, and it is supplied on tape and reel for automated assembly. Drive voltages range from 4.5V to 10V for optimal Rds(on) performance.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 34 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 18.4A (Tc) |
| Rds On (Max) @ Id, Vgs | 8.8mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3W (Ta), 6W (Tc) |
| Vgs(th) (Max) @ Id | 2.8V @ 250µA |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 67 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1970 pF @ 50 V |
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