SI4172DY-T1-GE3
MOSFET N-CH 30V 15A 8SOManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix TrenchFET® SI4172DY-T1-GE3 is an N-Channel Power MOSFET designed for efficient power switching applications. This component features a 30V drain-source breakdown voltage and a continuous drain current capability of 15A at 25°C (Tc). The device exhibits a low on-resistance (Rds On) of 12mOhm maximum at 11A and 10V Vgs. With a maximum power dissipation of 2.5W (Ta) and 4.5W (Tc), it is suitable for moderate power density designs. The 8-SOIC package facilitates surface mounting, and it operates within a temperature range of -55°C to 150°C. Key electrical parameters include a gate charge (Qg) of 23 nC max at 10V and input capacitance (Ciss) of 820 pF max at 15V. This MOSFET is utilized across various industries including consumer electronics, industrial automation, and automotive systems.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 15A (Tc) |
| Rds On (Max) @ Id, Vgs | 12mOhm @ 11A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 4.5W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 23 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 820 pF @ 15 V |
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