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SI4170DY-T1-GE3

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SI4170DY-T1-GE3

MOSFET N-CH 30V 30A 8SO

Manufacturer: Vishay Siliconix

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Vishay Siliconix SI4170DY-T1-GE3 is an N-Channel TrenchFET® Power MOSFET designed for high-efficiency power switching applications. This component offers a 30V drain-source voltage and a continuous drain current capability of 30A at 25°C (Tc). Featuring a low on-resistance of 3.5mOhm maximum at 15A and 10V Vgs, the SI4170DY-T1-GE3 minimizes conduction losses. The device supports a gate drive range from 4.5V to 10V, with a maximum gate charge of 100 nC at 10V. Its input capacitance (Ciss) is 4355 pF maximum at 15V. The MOSFET is housed in an 8-SOIC package, suitable for surface mounting, and can dissipate up to 6W at 25°C (Tc) or 3W at 25°C (Ta). Operating temperatures range from -55°C to 150°C. This Vishay Siliconix MOSFET is commonly utilized in power management, automotive, and industrial power control systems.

Additional Information

Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 13 week(s)Product Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-SOIC (0.154"", 3.90mm Width)
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C30A (Tc)
Rds On (Max) @ Id, Vgs3.5mOhm @ 15A, 10V
FET Feature-
Power Dissipation (Max)3W (Ta), 6W (Tc)
Vgs(th) (Max) @ Id2.6V @ 250µA
Supplier Device Package8-SOIC
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds4355 pF @ 15 V

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