SI4170DY-T1-GE3
MOSFET N-CH 30V 30A 8SOManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SI4170DY-T1-GE3 is an N-Channel TrenchFET® Power MOSFET designed for high-efficiency power switching applications. This component offers a 30V drain-source voltage and a continuous drain current capability of 30A at 25°C (Tc). Featuring a low on-resistance of 3.5mOhm maximum at 15A and 10V Vgs, the SI4170DY-T1-GE3 minimizes conduction losses. The device supports a gate drive range from 4.5V to 10V, with a maximum gate charge of 100 nC at 10V. Its input capacitance (Ciss) is 4355 pF maximum at 15V. The MOSFET is housed in an 8-SOIC package, suitable for surface mounting, and can dissipate up to 6W at 25°C (Tc) or 3W at 25°C (Ta). Operating temperatures range from -55°C to 150°C. This Vishay Siliconix MOSFET is commonly utilized in power management, automotive, and industrial power control systems.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.5mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3W (Ta), 6W (Tc) |
| Vgs(th) (Max) @ Id | 2.6V @ 250µA |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 100 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4355 pF @ 15 V |