SI4158DY-T1-GE3
MOSFET N-CH 20V 36.5A 8SOManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix TrenchFET® SI4158DY-T1-GE3 is an N-Channel power MOSFET designed for high-efficiency power management applications. This component features a 20V drain-source voltage rating and a continuous drain current capability of 36.5A at 25°C (Tc). The TrenchFET® technology ensures low on-resistance, specified at a maximum of 2.5mOhm at 20A and 10V gate-source voltage. With a gate charge (Qg) of 132 nC (max) at 10V and input capacitance (Ciss) of 5710 pF (max) at 10V, it is optimized for fast switching.
This MOSFET supports drive voltages from 4.5V to 10V and has a maximum gate-source voltage of ±16V. The device offers a power dissipation of 3W (Ta) and 6W (Tc). Packaged in an 8-SOIC (0.154", 3.90mm Width) surface-mount case, the SI4158DY-T1-GE3 operates across a temperature range of -55°C to 150°C (TJ). Its robust design makes it suitable for use in automotive, industrial, and power supply applications. The device is supplied on tape and reel.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 36.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.5mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3W (Ta), 6W (Tc) |
| Vgs(th) (Max) @ Id | 2.1V @ 250µA |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 132 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5710 pF @ 10 V |
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