SI4110DY-T1-GE3
MOSFET N-CH 80V 17.3A 8SOManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix TrenchFET® N-Channel Power MOSFET, part number SI4110DY-T1-GE3, offers an 80V drain-source breakdown voltage and a continuous drain current of 17.3A at 25°C (Tc). This surface-mount device, packaged in an 8-SOIC, features a low on-resistance specification of 13mOhm maximum at 11.7A and 10V gate-source voltage. The device exhibits a gate charge of 53 nC maximum at 10V, with input capacitance (Ciss) at 2205 pF maximum. Power dissipation capabilities are rated at 3.6W (Ta) and 7.8W (Tc). Operating temperature range is -55°C to 150°C (TJ). This component is suitable for applications in automotive, industrial, and power supply sectors.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 17.3A (Tc) |
| Rds On (Max) @ Id, Vgs | 13mOhm @ 11.7A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.6W (Ta), 7.8W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 80 V |
| Gate Charge (Qg) (Max) @ Vgs | 53 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2205 pF @ 40 V |