SI4108DY-T1-GE3
MOSFET N-CH 75V 20.5A 8-SOICManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix SI4108DY-T1-GE3 is an N-Channel Power MOSFET designed for efficient power management applications. This component features a 75V Drain-Source Voltage (Vdss) and a continuous drain current rating of 20.5A (Tc) at 25°C. With a low on-resistance of 9.8mOhm maximum at 13.8A and 10V Vgs, it minimizes conduction losses. The device exhibits a gate charge of 54 nC maximum at 10V and an input capacitance of 2100 pF maximum at 38V. Packaged in an 8-SOIC (0.154", 3.90mm Width) surface mount configuration, it is supplied on cut tape. The Vishay Siliconix SI4108DY-T1-GE3 is utilized in various industries including automotive, industrial power supplies, and consumer electronics.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Cut Tape (CT)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 9.8mOhm @ 13.8A, 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | 8-SOIC |
| Drain to Source Voltage (Vdss) | 75 V |
| Gate Charge (Qg) (Max) @ Vgs | 54 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2100 pF @ 38 V |
Request a Quote
Clients Also Buy
IRF820APBF-BE3
MOSFET N-CH 500V 2.5A TO220AB
SIJH5700E-T1-GE3
N-CHANNEL 150 V (D-S) 175C MOSFE
SI3442CDV-T1-GE3
MOSFET N-CH 20V 8A 6TSOP
