SI4104DY-T1-GE3
MOSFET N-CH 100V 4.6A 8SOManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix TrenchFET® SI4104DY-T1-GE3 is an N-Channel power MOSFET designed for efficient power switching applications. It features a 100V drain-source voltage and a continuous drain current capability of 4.6A at 25°C case temperature. The device exhibits a low on-resistance of 105mOhm maximum at 5A and 10V Vgs. With a gate charge of 13nC at 10V, it offers optimized switching performance. The MOSFET is packaged in an 8-SOIC (0.154", 3.90mm width) for surface mounting and supports a maximum power dissipation of 2.5W (TA) and 5W (TC). Operating temperature range is from -55°C to 150°C. This component is suitable for use in automotive, industrial, and consumer electronics power management systems.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.6A (Tc) |
| Rds On (Max) @ Id, Vgs | 105mOhm @ 5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 5W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 13 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 446 pF @ 50 V |