SI4104DY-T1-E3
MOSFET N-CH 100V 4.6A 8SOManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix MOSFET N-Channel, part number SI4104DY-T1-E3, from the TrenchFET® series. This 100V device features a continuous drain current of 4.6A at 25°C (Tc) and offers a maximum Rds(on) of 105mOhm at 5A, 10V. It utilizes Metal Oxide MOSFET technology and is supplied in an 8-SOIC package for surface mounting. Key parameters include a gate charge (Qg) of 13nC at 10V and input capacitance (Ciss) of 446pF at 50V. The device supports a maximum gate-source voltage (Vgs) of ±20V and has a threshold voltage (Vgs(th)) of 4.5V at 250µA. Power dissipation is rated at 2.5W (Ta) and 5W (Tc). Operating temperature range is -55°C to 150°C. This component is suitable for applications in power management and industrial automation.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.6A (Tc) |
| Rds On (Max) @ Id, Vgs | 105mOhm @ 5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 5W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 13 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 446 pF @ 50 V |
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