SI4102DY-T1-GE3
MOSFET N-CH 100V 3.8A 8SOManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SI4102DY-T1-GE3 is an N-Channel TrenchFET® power MOSFET designed for efficient power switching applications. This device features a 100V drain-source breakdown voltage and a continuous drain current capability of 3.8A at 25°C (Tc). The Rds(On) is specified at a maximum of 158mOhm at 2.7A and 10V Vgs. Key parameters include a 11 nC maximum gate charge at 10V and 370 pF input capacitance at 50V. With a maximum power dissipation of 2.4W (Ta) and 4.8W (Tc), it is housed in a standard 8-SOIC package for surface mounting. Operating temperatures range from -55°C to 150°C (TJ). Typical applications include power management, automotive systems, and industrial automation where robust MOSFET performance is required.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.8A (Tc) |
| Rds On (Max) @ Id, Vgs | 158mOhm @ 2.7A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.4W (Ta), 4.8W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 11 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 370 pF @ 50 V |