SI4102DY-T1-E3
MOSFET N-CH 100V 3.8A 8SOManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix TrenchFET® N-Channel Power MOSFET, part number SI4102DY-T1-E3. This 100V device features a continuous drain current capability of 3.8A (Tc) and a low on-resistance of 158mOhm maximum at 2.7A and 10V Vgs. Designed for efficient power switching, it offers a maximum power dissipation of 4.8W (Tc) and 2.4W (Ta). The device is housed in an 8-SOIC package and operates within a temperature range of -55°C to 150°C. Key parameters include a gate charge of 11 nC maximum at 10V Vgs and an input capacitance of 370 pF maximum at 50V Vds. This MOSFET is suitable for applications in power management, automotive systems, and industrial control.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.8A (Tc) |
| Rds On (Max) @ Id, Vgs | 158mOhm @ 2.7A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.4W (Ta), 4.8W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 11 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 370 pF @ 50 V |
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