SI4090DY-T1-GE3
MOSFET N-CH 100V 19.7A 8SOManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix TrenchFET® SI4090DY-T1-GE3 is an N-Channel Power MOSFET designed for efficient power management. This device features a 100V drain-source breakdown voltage and a continuous drain current capability of 19.7A at 25°C (Tc). With a low on-resistance of 10mOhm at 15A and 10V Vgs, it minimizes conduction losses. The MOSFET offers a gate charge of 69 nC at 10V and input capacitance of 2410 pF at 50V. It is housed in a surface-mount 8-SOIC package, facilitating compact board designs. Power dissipation is rated at 3.5W (Ta) and 7.8W (Tc). Operating temperature ranges from -55°C to 150°C (TJ). This component is suitable for a variety of applications including power supplies, automotive systems, and industrial controls.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 34 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 19.7A (Tc) |
| Rds On (Max) @ Id, Vgs | 10mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.5W (Ta), 7.8W (Tc) |
| Vgs(th) (Max) @ Id | 3.3V @ 250µA |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 69 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2410 pF @ 50 V |
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