SI4062DY-T1-GE3
MOSFET N-CH 60V 32.1A 8SOManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix SI4062DY-T1-GE3 is an N-Channel TrenchFET® power MOSFET designed for demanding applications. This component features a 60V drain-source voltage (Vdss) and a continuous drain current (Id) of 32.1A at 25°C (Tc), with a maximum power dissipation of 7.8W (Tc). The device offers a low on-resistance (Rds On) of 4.2mOhm at 20A and 10V, achieved with a 4.5V to 10V gate drive. Key parameters include a maximum gate charge (Qg) of 60nC at 10V and input capacitance (Ciss) of 3175pF at 30V. The SI4062DY-T1-GE3 is housed in an 8-SOIC surface-mount package and is supplied on tape and reel. This MOSFET is suitable for use in power management, automotive, and industrial sectors requiring efficient power switching.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 34 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 32.1A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.2mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 7.8W (Tc) |
| Vgs(th) (Max) @ Id | 2.6V @ 250µA |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 60 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3175 pF @ 30 V |
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