SI4058DY-T1-GE3
MOSFET N-CH 100V 10.3A 8SOICManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SI4058DY-T1-GE3 is an N-Channel Power MOSFET designed for efficient power switching applications. This device features a drain-source voltage (Vdss) of 100V and a continuous drain current (Id) of 10.3A at 25°C (Tc). The on-resistance (Rds On) is specified at a maximum of 26mOhm at 10A and 10V Vgs. With a power dissipation (Pd) of 5.6W (Tc), it is suitable for demanding thermal environments. The device utilizes a surface mount 8-SOIC package for streamlined PCB integration. Key parameters include a gate charge (Qg) of 18 nC (max) at 10V Vgs and input capacitance (Ciss) of 690 pF (max) at 50V Vds. Operating temperature range is from -55°C to 150°C. This component is commonly found in industrial and automotive power management systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 34 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10.3A (Tc) |
| Rds On (Max) @ Id, Vgs | 26mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 5.6W (Tc) |
| Vgs(th) (Max) @ Id | 2.8V @ 250µA |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 18 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 690 pF @ 50 V |
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