SI4056DY-T1-GE3
MOSFET N-CH 100V 11.1A 8SOManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix TrenchFET® SI4056DY-T1-GE3 is an N-Channel Power MOSFET designed for high-efficiency power conversion applications. This device features a 100V drain-source voltage and a continuous drain current capability of 11.1A at 25°C (Tc). Optimized for switching performance, it offers a low on-resistance of 23mOhm maximum at 15A and 10V Vgs. The device utilizes Vishay's TrenchFET® technology for reduced gate charge (Qg) of 29.5 nC at 10V Vgs and input capacitance (Ciss) of 900 pF at 50V Vds. With a maximum power dissipation of 5.7W at 25°C (Tc), it is housed in a space-saving 8-SOIC package suitable for surface mounting. This component is commonly employed in industrial, automotive, and consumer electronics power management solutions.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 34 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11.1A (Tc) |
| Rds On (Max) @ Id, Vgs | 23mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 5.7W (Tc) |
| Vgs(th) (Max) @ Id | 2.8V @ 250µA |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 29.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 900 pF @ 50 V |
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