SI4038DY-T1-GE3
MOSFET N-CH 40V 42.5A 8SOManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SI4038DY-T1-GE3: This N-Channel TrenchFET® power MOSFET features a 40V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 42.5A at 25°C (Tc). With a low on-resistance of 2.4mOhm maximum at 15A and 10V Vgs, it offers efficient power handling with a maximum power dissipation of 7.8W (Tc). The component utilizes MOSFET technology and is available in a surface mount 8-SOIC package (0.154", 3.90mm Width), supplied on tape and reel. Key electrical parameters include a gate charge (Qg) of 87nC (max) at 10V Vgs and input capacitance (Ciss) of 4070pF (max) at 20V Vds. It operates across a temperature range of -55°C to 150°C (TJ) and supports drive voltages from 4.5V to 10V, with ±20V maximum gate-source voltage (Vgs). This device is well-suited for applications in power management, automotive, and industrial sectors.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 42.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.4mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.5W (Ta), 7.8W (Tc) |
| Vgs(th) (Max) @ Id | 2.1V @ 250µA |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 87 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4070 pF @ 20 V |
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