SI4010DY-T1-GE3
MOSFET N-CHANNEL 30V 31.3A 8SOManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SI4010DY-T1-GE3 is a TrenchFET® series N-Channel Power MOSFET designed for demanding applications. This component features a 30V drain-source voltage rating and a continuous drain current capability of 31.3A (Tc) at 25°C. With a low Rds(on) of 3.4mOhm maximum at 15A and 10V Vgs, it offers efficient power handling with a maximum power dissipation of 6W (Tc). The device is packaged in an 8-SOIC (0.154"", 3.90mm Width) for surface mounting and operates across a wide temperature range of -55°C to 150°C (TA). Key electrical characteristics include a gate charge (Qg) of 77 nC maximum at 10V and an input capacitance (Ciss) of 3595 pF maximum at 15V. It is supplied on tape and reel. This MOSFET is suitable for power management, automotive, and industrial applications.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TA) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 31.3A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.4mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 6W (Tc) |
| Vgs(th) (Max) @ Id | 2.3V @ 250µA |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | +20V, -16V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 77 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3595 pF @ 15 V |
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