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SI4010DY-T1-GE3

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SI4010DY-T1-GE3

MOSFET N-CHANNEL 30V 31.3A 8SO

Manufacturer: Vishay Siliconix

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Vishay Siliconix SI4010DY-T1-GE3 is a TrenchFET® series N-Channel Power MOSFET designed for demanding applications. This component features a 30V drain-source voltage rating and a continuous drain current capability of 31.3A (Tc) at 25°C. With a low Rds(on) of 3.4mOhm maximum at 15A and 10V Vgs, it offers efficient power handling with a maximum power dissipation of 6W (Tc). The device is packaged in an 8-SOIC (0.154"", 3.90mm Width) for surface mounting and operates across a wide temperature range of -55°C to 150°C (TA). Key electrical characteristics include a gate charge (Qg) of 77 nC maximum at 10V and an input capacitance (Ciss) of 3595 pF maximum at 15V. It is supplied on tape and reel. This MOSFET is suitable for power management, automotive, and industrial applications.

Additional Information

Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-SOIC (0.154"", 3.90mm Width)
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TA)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C31.3A (Tc)
Rds On (Max) @ Id, Vgs3.4mOhm @ 15A, 10V
FET Feature-
Power Dissipation (Max)6W (Tc)
Vgs(th) (Max) @ Id2.3V @ 250µA
Supplier Device Package8-SOIC
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)+20V, -16V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs77 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds3595 pF @ 15 V

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