SI4004DY-T1-GE3
MOSFET N-CH 20V 12A 8-SOICManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SI4004DY-T1-GE3 is an N-Channel Power MOSFET designed for efficient power switching applications. This component features a 20V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 12A at 25°C (Tc). The on-resistance (Rds On) is specified at a maximum of 13.8mOhm at 11A and 10V, facilitating low conduction losses. Key parameters include a gate charge (Qg) of 33nC (Max) at 10V and an input capacitance (Ciss) of 1280pF (Max) at 10V. The device is housed in an 8-SOIC package and utilizes surface mount technology for ease of integration. The threshold voltage (Vgs(th)) is a maximum of 2.5V at 250µA. This MOSFET is suitable for use in power management, automotive electronics, and industrial control systems. The component is supplied in Cut Tape (CT) packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Cut Tape (CT)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
| Rds On (Max) @ Id, Vgs | 13.8mOhm @ 11A, 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | 8-SOIC |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 33 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1280 pF @ 10 V |
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