SI3879DV-T1-E3
MOSFET P-CH 20V 5A 6TSOPManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix LITTLE FOOT® SI3879DV-T1-E3 is a P-Channel Power MOSFET designed for efficient power management. This device features a 20V drain-source voltage and a continuous drain current of 5A at 25°C (Tc). The SI3879DV-T1-E3 offers a maximum on-resistance of 70mOhm at 3.5A and 4.5V Vgs, with a drive voltage range of 2.5V to 4.5V. It is housed in a compact 6-TSOP package, suitable for surface mounting, and supports a maximum power dissipation of 2W (Ta) or 3.3W (Tc). Key parameters include a gate charge of 14.5 nC at 10V and input capacitance of 480 pF at 10V. Operating temperature range is -55°C to 150°C. This component finds application in various industries including consumer electronics and industrial automation.
Additional Information
Series: LITTLE FOOT®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5A (Tc) |
| Rds On (Max) @ Id, Vgs | 70mOhm @ 3.5A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 2W (Ta), 3.3W (Tc) |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Supplier Device Package | 6-TSOP |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 14.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 480 pF @ 10 V |
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