SI3853DV-T1-E3
MOSFET P-CH 20V 1.6A 6TSOPManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix LITTLE FOOT® P-Channel MOSFET, part number SI3853DV-T1-E3. This device features a 20V drain-source voltage and a continuous drain current of 1.6A at 25°C. It offers a maximum on-resistance of 200mOhm at 1.8A and 4.5V gate-source voltage. The gate charge is specified at 4nC maximum at 4.5V. The P-Channel MOSFET is housed in a 6-TSOP package and supports surface mount installation. It includes an isolated Schottky diode. Operating temperature range is -55°C to 150°C. This component is utilized in applications such as power management and battery charging, often found in portable electronics and automotive systems.
Additional Information
Series: LITTLE FOOT®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.6A (Ta) |
| Rds On (Max) @ Id, Vgs | 200mOhm @ 1.8A, 4.5V |
| FET Feature | Schottky Diode (Isolated) |
| Power Dissipation (Max) | 830mW (Ta) |
| Vgs(th) (Max) @ Id | 500mV @ 250µA (Min) |
| Supplier Device Package | 6-TSOP |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 4 nC @ 4.5 V |
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