SI3812DV-T1-GE3
MOSFET N-CH 20V 2A 6TSOPManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix LITTLE FOOT® N-Channel Power MOSFET, part number SI3812DV-T1-GE3. This device features a 20V Drain-Source voltage rating and a continuous drain current capability of 2A at 25°C. The N-channel MOSFET is presented in a compact 6-TSOP package, suitable for surface mounting. Key electrical characteristics include a maximum on-resistance of 125mOhm at 2.4A and 4.5V Vgs, with a gate charge of 4 nC at 4.5V. The device incorporates an isolated Schottky diode and operates across a temperature range of -55°C to 150°C. This component is utilized in applications requiring efficient power switching and control, commonly found in consumer electronics and industrial automation. The power dissipation is rated at 830mW at 25°C.
Additional Information
Series: LITTLE FOOT®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2A (Ta) |
| Rds On (Max) @ Id, Vgs | 125mOhm @ 2.4A, 4.5V |
| FET Feature | Schottky Diode (Isolated) |
| Power Dissipation (Max) | 830mW (Ta) |
| Vgs(th) (Max) @ Id | 600mV @ 250µA (Min) |
| Supplier Device Package | 6-TSOP |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 4 nC @ 4.5 V |
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