SI3812DV-T1-E3
MOSFET N-CH 20V 2A 6TSOPManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix LITTLE FOOT® N-Channel MOSFET, part number SI3812DV-T1-E3. This 20V device features a continuous drain current capability of 2A (Ta) with a maximum power dissipation of 830mW (Ta). It offers a low Rds(On) of 125mOhm at 2.4A and 4.5V. The SI3812DV-T1-E3 is constructed using MOSFET technology, with a package type of 6-TSOP and a SOT-23-6 Thin mounting. Key electrical characteristics include a gate charge of 4nC @ 4.5V and a Vgs(th) of 600mV @ 250µA (Min). This component includes an integrated Schottky diode and is suitable for applications requiring efficient power switching. The operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: LITTLE FOOT®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2A (Ta) |
| Rds On (Max) @ Id, Vgs | 125mOhm @ 2.4A, 4.5V |
| FET Feature | Schottky Diode (Isolated) |
| Power Dissipation (Max) | 830mW (Ta) |
| Vgs(th) (Max) @ Id | 600mV @ 250µA (Min) |
| Supplier Device Package | 6-TSOP |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 4 nC @ 4.5 V |
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