SI3805DV-T1-GE3
MOSFET P-CH 20V 3.3A 6TSOPManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix P-Channel MOSFET, LITTLE FOOT® Series, SI3805DV-T1-GE3. This device features a 20V drain-source voltage (Vdss) and a continuous drain current (Id) of 3.3A at 25°C (Tc). The Rds On is specified at a maximum of 84mOhm at 3A and 10V. It offers standard P-Channel MOSFET technology with an integrated Schottky diode for enhanced performance. The device is packaged in a 6-TSOP (SOT-23-6 Thin) for surface mounting and is supplied on tape and reel. Key parameters include a gate charge (Qg) of 12 nC (max) at 10V and an input capacitance (Ciss) of 330 pF (max) at 10V. Maximum power dissipation is 1.1W (Ta) or 1.4W (Tc). Operating temperature range is -55°C to 150°C (TJ). This component is suitable for applications in consumer electronics and industrial power management.
Additional Information
Series: LITTLE FOOT®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.3A (Tc) |
| Rds On (Max) @ Id, Vgs | 84mOhm @ 3A, 10V |
| FET Feature | Schottky Diode (Isolated) |
| Power Dissipation (Max) | 1.1W (Ta), 1.4W (Tc) |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Supplier Device Package | 6-TSOP |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 10V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 330 pF @ 10 V |