SI3499DV-T1-GE3
MOSFET P-CH 8V 5.3A 6TSOPManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix P-Channel TrenchFET® Power MOSFET, part number SI3499DV-T1-GE3. This device features a Drain-Source Voltage (Vdss) of 8 V and a continuous Drain Current (Id) of 5.3 A at 25°C (Ta). The Rds On is specified at a maximum of 23 mOhm at 7 A and 4.5 V Vgs. The device operates with a Gate-Source Voltage range of ±5 V and a Gate Charge (Qg) of 42 nC at 4.5 V. The maximum power dissipation is 1.1 W (Ta). This MOSFET is housed in a 6-TSOP (SOT-23-6 Thin) package, suitable for surface mounting. It is commonly utilized in power management applications across various industries including consumer electronics and industrial automation. The operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 11 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.3A (Ta) |
| Rds On (Max) @ Id, Vgs | 23mOhm @ 7A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 1.1W (Ta) |
| Vgs(th) (Max) @ Id | 750mV @ 250µA |
| Supplier Device Package | 6-TSOP |
| Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4.5V |
| Vgs (Max) | ±5V |
| Drain to Source Voltage (Vdss) | 8 V |
| Gate Charge (Qg) (Max) @ Vgs | 42 nC @ 4.5 V |
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