SI3499DV-T1-BE3
P-CHANNEL 1.5-V (G-S) MOSFETManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix P-Channel TrenchFET® MOSFET, part number SI3499DV-T1-BE3, offers an 8V drain-source voltage and a continuous drain current of 5.3A at 25°C (Ta). This device is optimized for low on-resistance, featuring a maximum Rds(on) of 23mOhm at 7A and a 4.5V gate-source voltage. Its low gate charge of 42 nC at 4.5V facilitates efficient switching. Designed for surface mounting in a 6-TSOP package, this MOSFET supports drive voltages as low as 1.5V and operates across a temperature range of -55°C to 150°C (TJ). The maximum power dissipation is 1.1W (Ta). Applications include power management in portable electronics, automotive systems, and industrial control.
Additional Information
Series: TrenchFET®RoHS Status: unknownManufacturer Lead Time: 11 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.3A (Ta) |
| Rds On (Max) @ Id, Vgs | 23mOhm @ 7A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 1.1W (Ta) |
| Vgs(th) (Max) @ Id | 750mV @ 250µA |
| Supplier Device Package | 6-TSOP |
| Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4.5V |
| Vgs (Max) | ±5V |
| Drain to Source Voltage (Vdss) | 8 V |
| Gate Charge (Qg) (Max) @ Vgs | 42 nC @ 4.5 V |
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