SI3483DV-T1-E3
MOSFET P-CH 30V 4.7A 6TSOPManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix P-Channel TrenchFET® MOSFET, part number SI3483DV-T1-E3, offers a 30 V drain-to-source voltage and 4.7 A continuous drain current at 25°C. This device features low on-resistance of 35 mOhm at 6.2 A and 10 V Vgs, enabled by its MOSFET technology. With a gate charge of 35 nC at 10 V, it is suitable for applications requiring efficient switching. The surface mount 6-TSOP package (SOT-23-6 Thin) provides a compact footprint. It operates across a temperature range of -55°C to 150°C (TJ) and has a maximum power dissipation of 1.14 W (Ta). This component finds application in power management and switching circuits within the automotive and industrial sectors.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.7A (Ta) |
| Rds On (Max) @ Id, Vgs | 35mOhm @ 6.2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.14W (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 6-TSOP |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 35 nC @ 10 V |
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